Transport mechanism in semiconducting glassy silicon vanadates
نویسندگان
چکیده
منابع مشابه
Thermoelectric Transport Phenomena in Semiconducting Nanostructures
Title of Document: THERMOELECTRIC TRANSPORT PHENOMENA IN SEMICONDUCTING NANOSTRUCTURES Jane Elizabeth Cornett, Doctor of Philosophy, 2013 Directed By: Associate Professor Oded Rabin, Department of Materials Science and Engineering The efficiencies of state-of-the-art thermoelectric devices made from bulk materials remain too low for widespread application. Early predictions by Hicks and Dressel...
متن کاملTransport and Aging in Glassy Systems
" Mean–Field–Behandlung " , bei der die Energielandschaft zeitlich schnell fluktuiert, selbst in hochdimensionalen Energielandschaften zu qualitativ anderen Ergebnissen f ¨ uhrt.
متن کاملMany-body effects in semiconducting single-wall silicon nanotubes
The electronic and optical properties of semiconducting silicon nanotubes (SiNTs) are studied by means of the many-body Green's function method, i.e., GW approximation and Bethe-Salpeter equation. In these studied structures, i.e., (4,4), (6,6) and (10,0) SiNTs, self-energy effects are enhanced giving rise to large quasi-particle (QP) band gaps due to the confinement effect. The strong electron...
متن کاملOscillating Cracks in Glassy Films on Silicon Substrates
An experimental study of cracks that develop during the annealing of hydrogen-rich amorphous silica films deposited on crystalline silicon substrates shows an interesting duality of behaviour. Cracks in films deposited on cubic (001) silicon surfaces tend to form in two principal directions, cube-edge directions such as [100] or diagonal directions [110] and, while the [100] cracks are straight...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1993
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.354464